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| SCH4C60S Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) Low On-State Voltage (1.6V(Typ.) @ ITM) G A K General Description Sensitive gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. TO202-3 Absolute Maximum Ratings (TJ= 25C unless otherwise specified) Symbol VDRM IT(AV) IT(RMS) ITSM I2t di/dt PGM PG(AV) IFGM TJ TSTG Condition arameter P Repetitive Peak Off-State Voltage Average On-State Current(180 Conduction Angle) R.M.S On-State Current(180 Conduction Angle) Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Operating Junction Temperature Storage Temperature Ti =60 C Tamb=25 C Ti =60 C Tamb=25 C 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t =10ms F=60Hz,Tj=125 C Condition ngs Ratings 600 1.35 0.9 4 1.35 33 4.5 50 0.5 Units V A A A A2s A/ W W A C C Tj=125 C 0.2 1.2A -40-125 C -40-150 C Thermal Characteristics Symbol RJc RJA Parameter Thermal Resistance Junction to Case(DC) Thermal Resistance Junction to Ambient(DC) Value 15 100 Units /W /W Jan 2009. Rev. 0 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. 1/5 SCH4C60S Electrical Characteristics (TC=25 unless otherwise noted) Value Symbol Parameter Test Conditions Units Min Repetitive Peak Off-State Current VAK=VDRM RGK=1K Peak On-State Voltage (1) Gate Trigger Current (2) Gate Trigger Voltage (2) Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage Holding Current Latching Current Dynamic resistance VD=12V,RL=140 ITM=8A, tp=380 20 0.1 15 6 5 100 1 1.8 50 0.8 mA V A V V V/ mA mA m Typ Max 5 A IDRM VTM IGT VGT VGD dv/dt IH IL Rd Note: VD=12V,RL=3.3K, RGK=1 K VD=67%VDRM, RGK=1 K IT=50mA, RGK=1 K IT=1mA, RGK=1 K Tj=125C 1. Pulse Width = 1.0 ms , Duty cycle 1% 2. RGK Current not Included in measurement 2/5 SCH4C60S Fig. 1 IT(AV)(DC) vs lead Temperature DC) Fig. 2 PD(AV) VS IT(AV) Fig. 3 IGT,IH,IL Temperature Characteristics Fig. 4 ITSM VS Number oof cycles Fig.5 dv/dt VS RGK Fig.6 dv/dt VS CGK 3/5 SCH4C60S Fig.7 On-state Characteristics Fig.7 Fig.8 RJA VS Pulse duration 4/5 SCH4C60S TO-202-3(plastics) Package Dimension TO-202-3(plastics plastics) DIM A C D F H J M N N1 O P mm Type 7.3 10.5 1.5 0.51 1.5 4.5 5.3 2.54 1.4 0.7 0.100 0.055 0.028 0.020 0.059 0.177 0.209 Inch Type 0.287 0.413 0.59 Min Max 10.1 Min Max 0.398 5/5 |
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